Electronic Properties of p-Type δ-Doped GaAs Structure under Electric Field

作     者：Emine OZTURK Ismail SOKMEN 

作者机构：Department of Physics Cumhuriyet University 58140 SIVAS Turkey Department of Physics Dokuzeylul University IZMIR Turkey 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2008年第25卷第4期

页      面：1415-1418页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 070208[理学-无线电物理] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

主　　题：supernova explosion proto-neutron star shock wave 

摘      要：We theoretically investigate the electronic properties of p-type δ-doped GaAs inserted into a quantum well under the electric field, at T = 0 K. We will investigate the influence of the electric field on the δ-doping concentration for a uniform distribution. The depth of confining potential, the density profile, the Fermi level, the subband energies and the subband populations calculate by solving the Schrodinger and Poisson equations self consistently. It is found that the changes of the electronic properties are quite sensitive to the applied electric field and the doping concentration. As different from single n-type δ-doped structure, we see a replace between the ground light-hole （lh1 ） subband and the first excited heavy-hole （hh2） subband whenever the external electric field reaches a critical value. We find the abrupt changing of the subband energies and the subband populations whenever the applied electric field reaches a certain value. Also, it is found that the heavy-hole subbands contain many more energy states than the light-hole ones, the population of the heavy-hole levels represent approximately 91% of all the carriers.