Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry

作     者：Re.Betancourt-Riera Ri.Betancourt-Riera J.M.Nieto Jalil R.Riera 

作者机构：Instituto Tecnol ógico de Hermosillo.Avenida Tecnol ógico S/N Col.Sahuaro Departamento de Investigaci ón en Física Universidad de Sonora Tecnol ógico de Monterrey-Campus Sonora Norte.Bulevar Enrique Mazón López No.965 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第11期

页      面：442-447页

核心收录：

学科分类：070207[理学-光学] 07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

主　　题：electron states Raman scattering selection rules quantum well wires 

摘      要：We study the electron states and the differential cross section for an electron Raman scattering process in a semi- conductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al0.35Ga0.65As matrix. The system is modeled by considering T = 0 K and also a single parabolic con- duction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted.