All-carbon nanotube diode and solar cell statistically formed from macroscopic network
作者机构：kolkovo Institute of Science and Technology 100 Novaya str Skolkovo Moscow Region 143025 Russia Department of Material Science Saint-Petersburg State Polytechnical University Polytechnicheskaya 29 Saint-Petersburg 195251 Russia Department of Applied Physics Aalto University School of Science Puumiehenkuja 2 Espoo 00075 Finland School of Energy Studies Savitribai Phule Pune University Ganeshkhind Pune-411007 India Department of Chemistry University of Rhode Island R102881 USA Emitech Inc. Fall River MA 02720 USA
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2015年第8卷第9期
页 面：2800-2809页
核心收录：
学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：the support by Ministry of Education and Science of the Russian Federation through project
主 题：all-carbon nanotube solarcell Schottky diode,carbon nanotube diode,carbon nanotube bundles
摘 要：Schottky diodes and solar cells are statistically created in the contact area between two macroscopic films of single-walled carbon nanotubes （SWNTs） at the junction of semiconducting and quasi-metallic bundles consisting of several high quality tubes. The n-doping of one of the films allows for photovoltaic action, owing to an increase in the built-in potential at the bundle-to-bundle interface. Statistical analysis demonstrates that the Schottky barrier device contributes significantly to the I-V characteristics, compared to the p-n diode. The upper limit of photovoltaic conversion efficiency has been estimated at N20%, demonstrating that the light energy conversion is very efficient for such a unique solar cell. While there have been multiple studies on rectifying SWNT diodes in the nanoscale environment, this is the first report of a macroscopic all-carbon nanotube diode and solar cell.
维普期刊数据库