Interface effect on the giant magnetoresistance for different magnetic multilayers systems
Interface effect on the giant magnetoresistance for different magnetic multilayers systems作者机构:Institute of Physics Chinese Academy of Sciences Beijing China State Key Laboratory of Molecular Reaction Dynamics Institute of Chemistry Chinese Academy of Sciences Beijing China
出 版 物:《Chinese Science Bulletin》 (科学通报(英文版))
年 卷 期:1997年第42卷第9期
页 面:729-733页
核心收录:
学科分类:0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学]
主 题:magnetic multilayer interface effect giant magnetoresistance Anderson model.
摘 要:THE giant magnetoresistance(GMR)effect in magnetic multilayer has been the subject of in-tense investigation since its *** theories,including semiclassical theoryand quantum theory,have been developed to deal with the GMR.A general view on the mi-croscopic mechanism of the GMR is the spin-dependent *** origin of the