Interface effect on the giant magnetoresistance for different magnetic multilayers systems

作     者：Zhang, LY Sun, H Li, BZ Pu, FK 

作者机构：Institute of Physics Chinese Academy of Sciences Beijing China State Key Laboratory of Molecular Reaction Dynamics Institute of Chemistry Chinese Academy of Sciences Beijing China 

出 版 物：《Chinese Science Bulletin》 (科学通报(英文版))

年 卷 期：1997年第42卷第9期

页      面：729-733页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：magnetic multilayer interface effect giant magnetoresistance Anderson model. 

摘      要：THE giant magnetoresistance(GMR)effect in magnetic multilayer has been the subject of in-tense investigation since its *** theories,including semiclassical theoryand quantum theory,have been developed to deal with the GMR.A general view on the mi-croscopic mechanism of the GMR is the spin-dependent *** origin of the