La-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

作     者：Xinn＇ao Li Jianping Yang Anyou Zuo Zuobin Yuan Zuli Liu Kailun Yao 

作者机构：College of Mathematic and Physics Nanjing University of Posts and Telecommunications Nanjing 210003 China School of Science Hubei Institute for Nationalities Enshi 445000 China Department of Physics Huazhong University of Science and Technology Wuhan 430074 China International Center of Material Physics Chinese Academy of Science Shenyang 110016 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2009年第25卷第2期

页      面：233-236页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Sci-ence Foundation of China under grant No. 10574047 the Key Program of the Education Branch of Hubei Provinceof China under grant No. D200529002 the Key Pro-gram of the Ethnic Affairs Committee of China undergrant No. 08HB05 the Scientific Research Foundation of Nanjing University of Post and Telecommunication un-der grant No. NY208025 

主　　题：Copper Crystal nitride film La-doped copper nitride films Magnetron sputtering structure 

摘      要：Copper nitride film （Cu3N） and La-doped copper nitride films （LaxCu3N） were prepared on glass substrates by reactive magnetron sputtering of a pure Cu and a pure La targets under N2 atmosphere. The results show that La-free film was composed of Cu3N crystallites with anti-ReO3 structure with （111） texture. The formation of the LaxCu3N films is affected strongly by La, and the peak intensity of the preferred crystalline [111]-orientation decreases with increasing the concentration of La. High concentration of La may prevent the formation of the Cu3N from crystallization. Compared with the Cu3N films, the resistivity of the LaxCu3N films have been decreased.