Microscopic model for chemical etchability along radiation damage paths in solids

作     者：Mukhtar Ahmed RANA 

作者机构：Physics Division Directorate of Science PINSTECH P.O. Nilore Islamabad Pakistan 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2008年第19卷第3期

页      面：174-177页

核心收录：

学科分类：082704[工学-辐射防护及环境保护] 08[工学] 0827[工学-核科学与技术] 

基　　金：Higher Education Commision  Pakistan HEC 

主　　题：固态径迹探测器 晶体缺陷 辐射损伤 固体 

摘      要：It would be very interesting to develop a picture about removal of atoms from the radiation damaged paths or latent nuclear tracks and undamaged bulk material in track detectors. Here, theory of chemical etching is described briefly and a new model for chemical etching along radiation damaged paths in solids is developed based on basic scientific facts and valid assumptions. Dependence of chemical etching on radiation damage intensity and etching conditions is discussed. A new parameter for etching along radiation damaged paths is introduced, which is useful for investigation of relationship between chemical etchability and radiation damage in a solid. Results and discussion presented here are also useful for further development of nuclear waste immobilization.