High pressure luminescence studies of europium doped GaN

作     者：K.Wisniewski W.Jadwisieńczak T.Thomas M.Spencer 

作者机构：Institute of of Experimental Physics Gdańsk University ul.Wita Stwosza 57 Gdańsk 80-952 Poland School of Electrical Engineering and Computer Science Ohio-University Athens OH 45701 USA Second of Electrical and Computer Engineering Cornell University Ithaca NY 14853 USA 

出 版 物：《Journal of Rare Earths》 (稀土学报（英文版）)

年 卷 期：2009年第27卷第4期

页      面：667-670页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 0803[工学-光学工程] 

基　　金：supported by the Polish Committee for Scientific Research (PBZ/MEiN/01/2006/39) 

主　　题：GaN, Eu^3+ ion high pressure spectroscopy rate earths 

摘      要：We reported on the high pressure luminescence spectra of polycrystalline Eu-doped GaN material synthesized in the reaction between alloys of gallium, bismuth and europium in ammonia atmosphere. The integrated luminescence intensity of the dominant Eu3＋ ion transition （5D0→^7F2） at 622 nm increased approximately one order of rnagnitude whereas its spectral position and line width did not change significantly between ambient and 6.8 GPa pressure, respectively. Moreover, material was characterized with photo- and cathodo-luminescence, and photoluminescence excitation spectra at different temperatures. It was found that the Eu3＋ ions occupying substitutional Ga site created different centers which could be effectively excited with above band gap excitation and from excitons resonantly photoexcited at the I2 bound exciton energy. Furthermore, the less efficient Eu3＋ ions excitation path existed through intrinsic impurities and defeels generating shallow energy levels in the forbidden gap. It was proposed that reduction of the thermal quenching and consequent enhancement of Eu3＋ ion emission intensity resulted from stronger localization of bound exciton on RESI trap induced by applied pressure.