Size Effects of the Critical Temperature in Ferroelectric Thin Films

作     者：V.C.Lo 

作者机构：Institute of Physics and Center for Condensed Matter PhysicsChinese Academy of SciencesBeijing 100080China 

出 版 物：《Communications in Theoretical Physics》 (理论物理通讯（英文版）)

年 卷 期：2007年第48卷第7期

页      面：183-188页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：the Center for Smart Materials of The Hong Kong Polytechnic University the Earmarked Research Grant(Account No.B-Q 363)allocated by the Hong Kong Research Grants Council 

主　　题：ferroelectric thin film critical temperature size effects 

摘      要：The size effects of the critical behaviors for the systems of interacting spins are discussed extensively *** this paper,the finite-size dependence of the critical temperature and susceptibility of the ferroelectric thinfilm are investigated numerically based on the four-state Potts model with the nearest-neighbor interactions between thedipole *** four orientations of the domains exist in the ferroelectric film and the movement of the domainwalls determines the polarization switching process besides the boundary conditions of the *** critical exponentsare obtained and our investigations show that the boundary conditions play the important roles for the ferroelectricproperties of the thin films and the critical behavior of the thin films strongly depends on the feature of the surface.