Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

作     者：Ahmet Kaya Sedat Zeyrek Sait Eren San Şmsettin Altındal 

作者机构：Opticianry Department Vocational School of Medical Sciences Turgut Ozal University Ankara 06370 Turkey Physics Department Faculty Sciences Dumlupınar University Kütahya 43000 Turkey Physics Department Gebze Institute of Technology Kocaeli 41400 Turkey Physics Department Faculty of Sciences Gazi University Ankara 06500 Turkey 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第1期

页      面：519-524页

核心收录：

学科分类：07[理学] 

主　　题：organic-inorganic based Schottky diodes perylene (C20H12) interfacial layer electrical and di-electric properties frequency and voltage dependence 

摘      要：The perylene （C20H12） layer effect on the electrical and dielectric properties of Al/p-Si （MS） and Al/perylene/p-Si （MPS） diodes have been investigated and compared in the frequency range of 0.7 kHz-2 MHz. Experimental results show that C-V characteristics give an anomalous peak for two structures at low frequencies due to interface states （Nss） and series resistance （Rs）. The increases in C and G/o3 at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant （er） and dielectric loss （e＇） are subtracted using C and G/co data at 1.5 V. The eI and e＂ values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln（o＇ac）-ln（w） for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C 2-V characteristics, the doping acceptor atom concentration （NA） and barrier height （,~） for Schottky barrier diodes （SBDs） 1.303 ~ 1015 cm-3, and 1.10 and I. 13 eV, respectively. of MS and MPS types are also obtained to be 1.484 ~ 1015