Carrier-Density-Determined Magnetoresistance in Semimetal SrIrO_(3)
作者机构：School of Physics and AstronomyBeijing Normal UniversityBeijing 100875China Key Laboratory of Multiscale Spin Physics(Ministry of Education)Beijing Normal UniversityBeijing 100875China SwissFELPaul Scherrer InstituteVilligen PSI 5232Switzerland Anhui Key Laboratory of Magnetic Functional Materials and DevicesSchool of Materials Science and EngineeringAnhui UniversityHefei 230601China
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2024年第41卷第10期
页 面：90-96页
核心收录：
学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学]
基 金：supported by the National Natural Science Foundation of China(Grant Nos.T2350005 and 5227123) the National Science Fund for Distinguished Young Scholars(Grant No.52225205) the National Key Research and Development Program of China(Grant Nos.2021YFA0718700 and 2023YFA1406500) the Fundamental Research Funds for the Central Universities
主 题：temperature. materials. topological
摘 要：SrIrO_(3),a Dirac material with a strong spin-orbit coupling(SOC),is a platform for studying topological properties in strongly correlated systems,where its band structure can be modulated by multiple factors,such as crystal symmetry,elements doping,oxygen vacancies,magnetic field,and ***,we find that the engineered carrier density plays a critical role on the magnetoelectric transport properties of the topological semimetal SrIrO_(3).The decrease of carrier density subdues the weak localization and the associated negative magnetoresistance,while enhancing the SOC-induced weak ***,the sample with the lowest carrier density exhibits high-field positive magnetoresistance,suggesting the presence of a Dirac *** addition,the anisotropic magnetoresistance indicates the anisotropy of the electronic structure near the Fermi *** engineering of carrier density provides a general strategy to control the Fermi surface and electronic structure in topological materials.
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