Modeling of Amperometric Immunosensor for CMOS Integration

作     者：Ce Li~(1,2) Haigang Yang~1 Shanhong Xia~1 Chao Bian~(1,2) (1.The State Key Lab of Transducer Technology,Institute of Electronics,CAS,Beijing 100080,China) (2.Graduate University of Chinese Academy of Sciences,Beijing 100039,China) 

出 版 物：《稀有金属材料与工程》 (Rare Metal Materials and Engineering)

年 卷 期：2006年第S3期

页      面：439-442页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程] 

主　　题：amperometric microelectrode circuit model potentiostat folded-cascode 

摘      要：A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this *** model parameters are extracted with several methods and verified by MATLAB and SPICE simulation.A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit *** mean square error norm of the simulated curve against the measured one is 8.65×10-17The whole circuit has been fabricated in a 0.35μm CMOS process.