An ultrathin wide-band planar metamaterial absorber based on a fractal frequency selective surface and resistive film

作     者：范跃农 程用志 聂彦 王鲜 龚荣洲 Fan Yue-Nonga)b),Cheng Yong-Zhi a),Nie Yana),Wang Xiana),and Gong Rong-Zhou a) a) School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China b) Department of Mechanical and Electronic Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333403,China

作者机构：School of Optical and Electronic InformationHuazhong University of Science and Technology Department of Mechanical and Electronic EngineeringJingdezhen Ceramic Institute 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第6期

页      面：570-575页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 

基　　金：supported by the National Natural Science Foundation of China (Grant No. 51207060) the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090142110004) 

主　　题：wide-band metamaterial absorber fractal frequency selective surface resistive films 

摘      要：We propose an ultrathin wide-band metamaterial absorber （MA） based on a Minkowski （MIK） fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz-20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields.