Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator
作者机构:CAS Key Laboratory of Quantum InformationUniversity of Science and Technology of ChinaHefei 230026China CAS Center for Excellence in Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefei 230026China Origin Quantum Computing Company LimitedHefei 230088China
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2024年第33卷第9期
页 面:139-143页
核心收录:
学科分类:07[理学] 070201[理学-理论物理] 0702[理学-物理学]
基 金:the National Natural Science Foun-dation of China(Grant Nos.92265113,12074368,12304560,and 12034018) China Postdoctoral Science Foundation(Grant Nos.BX20220281 and 2023M733408)
主 题:triple-quantum dot strong coupling circuit quantum electrodynamics(cQED) scalable siliconbased cQED architectures
摘 要:Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum *** satisfy the connectivity requirements and reduce the lithographic complexity,utilizing the qubit array structure and the circuit quantum electrodynamics(cQED)architecture together is expected to be a feasible scaling scheme.A triple-quantum dot(TQD)coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension *** this article,we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide(CPW)*** TQD can couple to the resonator via the right double-quantum dot(RDQD),which reaches the strong coupling regime with a charge–photon coupling strength of g0/(2p)=175 ***,we illustrate the high tunability of the TQD through the characterization of stability diagrams,quadruple points(QPs),and the quantum cellular automata(QCA)*** results contribute to fostering the exploration of silicon-based qubit integration.