A novel compound cleaning solution for benzotriazole removal after copper CMP

作     者：顾张冰 刘玉岭 高宝红 王辰伟 邓海文 

作者机构：Institute of MicroelectronicsHebei University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第10期

页      面：155-160页

核心收录：

学科分类：080503[工学-材料加工工程] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan China(Nos.2009ZX02308-003 2014ZX02301003-007) 

主　　题：benzotriazole removal alkaline chelating agent surfactant corrosion inhibitor 

摘      要：After the chemical mechanical planarization （CMP） process, the copper surface is contaminated by a mass of particles （e.g. silica） and organic residues （e.g. benzotriazole）, which could do great harm to the integrated circuit, so post-CMP cleaning is essential. In particular, benzotriazole （BTA） forms a layer of Cu-BTA film with copper on the surface, which leads to a hydrophobic surface of copper. So an effective cleaning solution is needed to remove BTA from the copper surface. In this work, a new compound cleaning solution is designed to solve two major problems caused by BTA： one is removing BTA and the other is copper surface corrosion that is caused by the cleaning solution. The cleaning solution is formed of alkaline chelating agent （FA/O II type）, which is used to remove BTA, and a surfactant （FA/O I type）, which is used as a corrosion inhibitor. BTA removal is characterized by contact angle measurements and electrochemical techniques. The inhibiting corrosion ability of the surfactant is also characterized by electrochemical techniques. The proposed compound cleaning solution shows advantages in removing BTA without corroding the copper surface.