Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD

作     者：Deheng ZHANG(Dept. of Physics, Shandong University, Jinan 250100, China)Honglei MA(Institute of Optoelectronic Materials and Devices, Shandong University, Jinan 250100, China) 

作者机构：Dept. of Physics Shandong University Jinan 250100 China Institute of Optoelectronic Materials and Devices Shandong University Jinan 250100 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：1997年第13卷第1期

页      面：50-56页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 070301[理学-无机化学] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：SnO cm Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO2 Films Deposited by APCVD 

摘      要：Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.