Low-field magnetoresistance of (1-x)La_(0.6)Dy_(0.1)Sr_(0.3)MnO_3/0.5x (Sb_2O_3) composite system under different sintering temperatures of matrix

作     者：Yang, Jie Yan, Guoqing Wang, Guiying Tang, Yonggang Song, Qixiang Zhang, Mingyu Peng, Zhensheng 

作者机构：Anhui Key Laboratory of Spintronic and Nanometric Materials Suzhou 234000 Anhui China School of Mechanical and Electronic Engineering Suzhou University Suzhou 234000 Anhui China Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2012年第31卷第3期

页      面：276-280页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：supported by the National Natural Foundation of China (No. 19934003) the Natural Science Research Key Program of Anhui Educational Committee (No. KJ2011A259) the Opening Program of Cultivating Base of Anhui Key Laboratory of Spintronics and Nanomaterials (Nos. 2010YKF04 2011YKF05) the Professors’and Doctors’Research Startup Foundation of Suzhou University (Nos. 2011jb01 2011jb02) 

主　　题：low-field magnetoresistance two-phase composite sintering temperature of the matrix perovskite manganite 

摘      要：A series of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x(Sb2O3)(x=0.15) samples were prepared by the solid-state reaction method, and the influence of sintering temperature of the matrix on low-field magnetoresistance of (1-x)La0.6Dy0.1Sr0.3MnO3/0.5x (Sb2O3) was studied through the measurements of X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) image, resistivity-temperature (ρ-T) curves, and magnetoresistance-temperature (MR-T) curves. The results indicate that for the samples with low sintering temperature of the matrix, lowfield magnetoresistance effect appears on the whole temperature range and can be explained by grain boundary effect; for the sample with high sintering temperature of the matrix, intrinsic magnetoresistance peak appears on the high-temperature range, low-field magnetore-sistance effect appears on low temperature range, and the magnetoresistance in the magnetic field of 0.2 T and on the comparatively large temperature range between 280 K and 225 K hardly changes with temperature and remains at 4.8%, which can be explained by the competition between the intrinsic magnetoresistance induced by double-exchange function inside grains and the tunneling magnetoresis-tance (TMR) induced by grain boundary effect. The temperature stability of magnetoresistance is beneficial to the practical applications of MR.