Visualizing extended defects at the atomic level in a Bi_(2)Sr_(2)CaCu_(2)O8_(+σ) superconducting wire
作者机构:Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceKey Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2024年第33卷第9期
页 面:43-47页
核心收录:
学科分类:080705[工学-制冷及低温工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0807[工学-动力工程及工程热物理] 0702[理学-物理学]
主 题:superconductor microstructure defect scanning transmission electron microscopy
摘 要:The microstructure significantly influences the superconducting ***,the defect structures and atomic arrangements in high-temperature Bi_(2)Sr_(2)CaCu_(2)O8_(+σ) superconducting wire are directly characterized via stateof-the-art scanning transmission electron *** oxygen atoms are observed in both the charge reservoir layers and grain boundaries in the doped *** phases with varied numbers of CuO_(2) layers are found,and twist interfaces with different angles are *** study provides insights into the structures of Bi-2212 wire and lays the groundwork for guiding the design of microstructures and optimizing the production methods to enhance superconducting performance.