MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

作     者：J.Lee W.Gao Z.Li M.Hodgson A.Asadov J.Metson 

作者机构：DepartmentofMechanicalEngineeringTheUniversityofAucklandAuckland1004NewZealand DepartmentofChemicalandMaterialsEngineeringTheUniversityofAucklandAuckland1004NewZealand DepartmentofChemistryTheUniversityofAucklandPrivateBag92019Auckland1004NewZealand 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2005年第18卷第3期

页      面：177-183页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This work was supported by New Zealand Foundation for Research,Science and Technology(Top Achiever Doctoral Scholarship) Australian Institute of Nuclear Science and Engineering(Postgraduate Award).The authors would also like to thank Mrs.Catherine Hobbis for technical support 

主　　题：zinc oxide thin films microstructure magnetron sputtering post-deposition annealing electrical conductivity 

摘      要：ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films wer e investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductiv ity measurement and scanning electron microscopy. Only the strong 002 peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films wa s found to alter the film s microstructure and properties, including crystallini ty, porosity, grain size, internal stress level and resistivity. It was also fou nd that after annealing, the conductivity of poorly conductive samples often imp roved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films can be decre ased from 102 to 10-4Ω·cm after annealing in nitrogen. To explain the effects of annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cau se diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films, which may decrease the resistiv ity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.