Gas Sensor Based on lnterdigitated Gate Electrode Field Effect Transistor

作     者：Frank Lewis Edward S.Kolesar 

作者机构：The University of Texas at ArlingtonArlingtonT X 76019USA Texas Christian UniversityFort WorthT X 76129USA 

出 版 物：《稀有金属材料与工程》 (Rare Metal Materials and Engineering)

年 卷 期：2006年第S3期

页      面：140-142页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程] 

主　　题：IGEFET sensor (NO2) DIMP Fourier transform 

摘      要：The paper presents a new method for fabricating a gas-sensitive micro-sensor based on *** primary target agents are nitrogen dioxides （NO2）,and ***-per-billion concentration levels of these two chemicals can be *** interdigitated gate electrode field-effect transistor （IGEFET） has been coupled with a chemically-active and electron-beam evaporated copper phthaiocyanine （CuPc） thin film to implement a gas-sensitive *** sensor is excited with voltage *** and frequency-domain response were *** magnitude of the normalized difference Fourier transform is distinct distinguished.