Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

作     者：张诚 孙慧卿 李旭娜 孙浩 范宣聪 张柱定 郭志友 

作者机构：Laboratory of Nanophotonic Functional Materials and Devices Institute of Opto-Electronic Materials and TechnologySouth China Normal University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第2期

页      面：538-543页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：Project supported by the Special Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006) the Major Scientific and Technological Projects of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204) the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province,China(Grant Nos.2014B010121001 and 2014B010119004) 

主　　题：double electron blocking layers ultraviolet light-emitting diodes n-A1GaN electrostatic field 

摘      要：The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.