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Microstructure and electric characteristics of AETiO3(AE=Mg, Ca, Sr)doped CaCu3Ti4O12 thin films prepared by the sol–gel method

Microstructure and electric characteristics of AETiO3(AE=Mg, Ca, Sr)doped CaCu3Ti4O12 thin films prepared by the sol–gel method

作     者:Dong Xu Kai He Buhua Chen Chuanmeng Xu Shuyu Mu Lei Jiao Xiujuan Sun Yongtao Yang 

作者机构:School of Material Science and Engineering Jiangsu University State Key Laboratory of Tribology Tsinghua University Changzhou Ming Errui Ceramics Co. Ltd. 

出 版 物:《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))

年 卷 期:2015年第25卷第5期

页      面:399-404页

核心收录:

学科分类:08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 

基  金:financially supported by the National Natural Science Foundation of China (Grant no. 51572113) Tribology Science Fund of State Key Laboratory of Tribology (SKLTKF13B08) Changzhou Science and Technology Program (CC20140002) 

主  题:Thin films Microstructure Dielectric properties Sol–gel method Alkline-earth metal titante 

摘      要:This paper focuses on the effects of alkline-earth metal titante AETiO(AE = Mg,Ca,Sr) doping on the microstructure and electric characteristics of CaCuTiOthin films prepared by the sol-gel *** results showed that the grain size of CCTO thin films could be increased by *** movement of the grain boundaries was impeded by the second phases of CaTiOand SrTiOconcentrating at grain boundaries in CaTiOand SrTiOdoped CCTO thin *** ascent of dielectric constant could be observed in 0.1Mg TiOdoped CCTO thin films,which was almost as three times high as pure CCTO thin film and the descent of the dielectric loss at low frequency could also be *** addition,the nonlinear coefficient(α),threshold voltage(V) and leakage current(I) of AETiOdoped CCTO thin films(AE = Mg,Ca,Sr) showed different variation with the increasing content of the MgTiO,CaTiOand SrTiO.

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