Properties of ZnO Thin Films Grown on Si (100) Substrates by Pulsed Laser Deposition

作     者：Young Rae Jang Keon-Ho Yoo Seung Min Park 

作者机构：Department of PhysicsKyung Hee University Department of ChemistryKyung Hee University 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2010年第26卷第11期

页      面：973-976页

核心收录：

学科分类：07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：ZnO Pulsed laser deposition Photoluminescence 

摘      要：ZnO thin films were grown on Si （100） substrates by pulsed laser deposition using a ZnO *** substrate temperature was varied in the range of room temperature to 800 ℃,and the oxygen partial pressure of 0.1333 Pa （1 m Torr） to 1333 Pa （10 Torr）.The properties of the resulting films were investigated by photoluminescence （PL）,grazing incidence X-ray diffraction （GIXRD）,X-ray photoelectron spectroscopy （XPS）,and field emission scanning electron microscopy （FESEM）.Based on the ultraviolet （UV,～380 nm） to visible emission ratio in the PL spectrum,the optimum growth conditions were determined to be 600 ℃ and 133.3 Pa （1 Torr）,*** oxygen 1s peak in the XPS spectrum was decomposed into two *** peak at lower binding energy increased in intensity with the oxygen partial pressure from 0.1333 Pa （1 m Torr） to 133.3 Pa （1 Torr） while the other peak *** GIXRD curve at the optimum condition showed strong two peaks （002） and （103）.A strong correlation between the （103） peak intensity and the UV emission intensity was found.