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Molecular group dynamics study on slip flow of thin fluid film based on the Hamaker hypotheses

Molecular group dynamics study on slip flow of thin fluid film based on the Hamaker hypotheses

作     者:ZHOU JianFeng, SHAO ChunLei & GU BoQin College of Mechanical and Power Engineering, Nanjing University of Technology, Nanjing 210009, China 

作者机构:College of Mechanical and Power Engineering Nanjing University of Technology Nanjing China 

出 版 物:《Science China(Technological Sciences)》 (中国科学(技术科学英文版))

年 卷 期:2010年第53卷第7期

页      面:1833-1838页

核心收录:

学科分类:0810[工学-信息与通信工程] 080704[工学-流体机械及工程] 080103[工学-流体力学] 08[工学] 0807[工学-动力工程及工程热物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 0812[工学-计算机科学与技术(可授工学、理学学位)] 0801[工学-力学(可授工学、理学学位)] 

基  金:supported by the National Natural Science Foundation of China (Grant No. 10872088) the Doctoral Foundation of Ministry of Education of China (Grant Nos. 20070291004 and 20093221120009) the Academic Discipline Construction Fund of Nanjing University of Technology 

主  题:Hamaker hypotheses molecular group velocity slip Lennard-Jones potential 

摘      要:The thin fluid film was assumed to consist of a number of spherical fluid molecular groups and the attractive forces of molecular group pairs were calculated by the derived equation according to the three Hamaker homogeneous material hypotheses. Regarding each molecular group as a dynamics individual, the simulation method for the shearing motion of multilayer fluid molecular groups, which was initiated by two moving walls, was proposed based on the Verlet velocity iterative algorithm. The simulations reveal that the velocities of fluid molecular groups change about their respective mean velocities within a narrow range in steady state. It is also found that the velocity slips occur at the wall boundary and in a certain number of fluid film layers close to the wall. Because the dimension of molecular group and the number of group layers are not restricted, the hypothetical thickness of fluid film model can be enlarged from nanometer to micron by using the proposed simulation method.

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