Uniaxial strain-dependent magnetic and electronic properties of (Ga,Mn)As nanowires

作     者：张晨辉 向钢 兰木 张析 

作者机构：College of Physical Science and TechnologySichuan University Key Laboratory of High Energy Density Physics and Technology of Ministry of EducationSichuan University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第9期

页      面：306-309页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11004141 and 11174212) the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.11-0351) the Scientific Research Starting Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China 

主　　题：dilute magnetic semiconductors (Ga,Mn)As nanowire strain 

摘      要：Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）. We found that （Ga,Mn）As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the N-Ws. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.