Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

作     者：Aritra Acharyya Jit Chakraborty Kausik Das Subir Datta Pritam De Suranjana Banerjee J.P.Banerjee 

作者机构：Institute of Radio Physics and ElectronicsUniversity of Calcutta92APC RoadKolkata 700009India Supreme Knowledge Foundation Group of InstitutionsSir J.C.Bose School of Engineering1Khan RoadMankunduHooghlyWest Bengal 712139India Academy of TechnologyWest Bengal University of TechnologyAdisaptagramHooghly 712121West BengalIndia 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第10期

页      面：46-53页

核心收录：

学科分类：0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

主　　题：band to band tunneling DDR silicon IMPATTs large-signal simulation millimeter-wave series resistance terahertz regime 

摘      要：The authors have carried out the large-signal characterization ofsilicon-based double-drift region （DDR） impact avalanche transit time （IMPATT） devices designed to operate up to 0.5 THz using a large-signal simulation method developed by the authors based on non-sinusoidal voltage excitation. The effect of band-to-band tunneling as well as parasitic series resistance on the large-signal properties of DDR Si IMPATTs have also been studied at different mm-wave and THz frequencies. Large-signal simulation results show that DDR Si IMPATT is capable of delivering peak RF power of 633.69 mW with 7.95% conversion efficiency at 94 GHz for 50% voltage modulation, whereas peak RF power output and efficiency fall to 81.08 mW and 2.01% respectively at 0.5 THz for same voltage modulation. The simulation results are compared with the experimental results and are found to be in close agreement.