A novel on-chip high to low voltage power conversion circuit

作     者：王辉 王松林 来新泉 叶强 牟在鑫 李先锐 郭宝龙 

作者机构：Institute of Mechano-electronic EngineeringXidian University Institute of Electronic CADXidian University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第3期

页      面：122-126页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 

基　　金：supported by the National Natural Science Foundation of China (No. 60572152) 

主　　题：power management bandgap reference high-order temperature compensation push-pull output 

摘      要：A novel power supply transform technique for high voltage IC based on the TSMC 0.6μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm^2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/℃. Compared with the traditional LDO （low dropout） regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.