Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance
作者机构:Laboratory of Metal Oxide SemiconductorsResearch and Development Center for Advanced Technologies in MicroelectronicsNational Research Tomsk State UniversityTomsk 634050Russia Fokon LLCKaluga 248035Russia Department of Semiconductor Electronics and Physics of SemiconductorsNational University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLCSaint Petersburg 194223Russia
出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))
年 卷 期:2024年第45卷第8期
页 面:74-80页
核心收录:
学科分类:0709[理学-地质学] 0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 070901[理学-矿物学、岩石学、矿床学] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 0702[理学-物理学]
基 金:support of the Russian Science Foundation grant number 20-79-10043-P
主 题:HVPE gallium oxide solar-blind ultraviolet detector self-powered mode
摘 要:Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital *** films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase *** spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 *** maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) ***.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 *** high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole ***α-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) *** a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.