Annealing time dependent structural, morphological, optical and electrical properties of RF sputtered p-type transparent conducting SnO_2/Al/SnO_2 thin films

作     者：Keun Young PARK Ho Je CHO Tae Kwon SONG Hang Joo KO Bon Heun KOO 

作者机构：School of Materials Science & Engineering Changwon National University Photovoltaic and Optoelectronic device center Korea Photonics Technology Institute 

出 版 物：《Transactions of Nonferrous Metals Society of China》 (中国有色金属学报（英文版）)

年 卷 期：2014年第24卷第S1期

页      面：129-133页

核心收录：

学科分类：080503[工学-材料加工工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0806[工学-冶金工程] 0818[工学-地质资源与地质工程] 0815[工学-水利工程] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0813[工学-建筑学] 0802[工学-机械工程] 0814[工学-土木工程] 0702[理学-物理学] 080201[工学-机械制造及其自动化] 

基　　金：Project(NIPA-2013-H0301-13-2009) supported by the MKE,Korea,under the ITRC support program supervised by the NIPA Project(2012HIB8A2026212) supported by the MEST and NRF through the Human Resource Training Project for Regional Innovation,Kored 

主　　题：pulsed laser deposition(PLD) transparent conducting oxide(TCO) p-type multi-layer transmittance 

摘      要：Transparent p-type conducting SnO2/Al/SnO2 multilayer films were fabricated on quartz substrates by radio frequency(RF) sputtering using SnO2 and Al targets. The deposited films were annealed at a fix temperature of 500 °C for different time durations(1-8 h). The effect of annealing time on the structural, morphological, optical and electrical performances of SnO2/Al/SnO2 multilayer films was studied. X-ray diffraction(XRD) results show that all the p-type conducting films possess polycrystalline SnO2 with tetragonal rutile structure. Hall-effect results indicate that 500 °C for 1 h is the optimum annealing condition for p-type SnO2/Al/SnO2 multilayer films, resulting in a hole concentration of 1.14×1018 cm-3 and a low resistivity of 1.38 ?·cm, respectively. The optical transmittance of the p-type SnO2/Al/SnO2 multilayer films is above 80% within annealing time range of 1-8 h, showing maximum for the films annealed for 1 h.