Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field

作     者：Nosirjon Khaydarovich Yuldashev Iftixorjon Isaqovich Yulchiev Bozorboy Joboraliyevich Akhmadaliev Khusanboy Manopovich Sulaymonov Nosirjon Khaydarovich Yuldashev;Iftixorjon Isaqovich Yulchiev;Bozorboy Joboraliyevich Akhmadaliev;Khusanboy Manopovich Sulaymonov

作者机构：Fergana Polytechnic Institute Fergana Uzbekistan 

出 版 物：《Journal of Applied Mathematics and Physics》 (应用数学与应用物理（英文）)

年 卷 期：2024年第12卷第7期

页      面：2407-2420页

学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学] 

主　　题：Semiconductor Recombination Radiation Shallow Acceptor Center Magnetic Field Zeeman Splitting g-Factors Anisotropy Circular Polarization Intensity 

摘      要：Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Р*** the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Р*** performed for some critical values of g2/g1, at which Р*** a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.