SOI-based radial-contour-mode micromechanical disk resonator
SOI-based radial-contour-mode micromechanical disk resonator作者机构:School of Information EngineeringHebei University of Technology The 13th Research InstituteChina Electronics Technology Group Corporation China Electronics Technology Group Corporation
出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))
年 卷 期:2011年第32卷第11期
页 面:72-76页
核心收录:
学科分类:080904[工学-电磁场与微波技术] 0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 0702[理学-物理学]
主 题:RF-MEMS micromechanical disk resonator SOI, thermo-compression bonding
摘 要:This paper reports a radial-contour-mode micromechanical disk resonator for radio frequency applications. This disk resonator with a gold plated layer as the electrodes, was prepared on a silicon-on-insulator wafer, which is supported by an anchor on another silicon wafer through Au-Au thermo-compression bonding. The gap between the disk and the surrounding gold electrodes is 100 nm. The radius of the disk is 20μm and the thickness is 4.5 μm. In results, the resonator shows a resonant frequency of 143 MHz and a quality factor of 5600 in vacuum