High-precision X-ray characterization for basic materials in modern high-end integrated circuit
作者机构：National Key Laboratory of Materials for Integrated CircuitsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Physical Science and TechnologyShanghaiTech UniversityShanghai 201210China Shanghai Synchrotron Radiation FacilityShanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China Beijing Synchrotron Radiation FacilityInstitute of High Energy PhysicsChinese Academy of ScienceBeijing 100049China
出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)
年 卷 期：2024年第45卷第7期
页 面：12-24页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 070207[理学-光学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学]
基 金：This work was supported by Youth Innovation Promotion Association CAS,National Natural Science Foundation of China(Grant No.11705263) Shanghai Rising-Star Program(Grant No.21QA1410900)
主 题：X-ray topography synchrotron radiation semiconductor materials crystal defects
摘 要：Semiconductor materials exemplify humanity s unwavering pursuit of enhanced performance,efficiency,and functionality in electronic *** its early iterations to the advanced variants of today,this field has undergone an extraordinary *** the reliability requirements of integrated circuits continue to increase,the industry is placing greater emphasis on the crystal ***,conducting a range of characterization tests on the crystals has become *** paper will examine the correlation between crystal quality,device performance,and production yield,emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor ***,we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.
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