Hetero-integrated high-peak-optical-power laser source (940 nm) for time-of-flight sensors

作     者：Sergey Olegovich Slipchenko Aleksandr Aleksandrovich Podoskin Ilia Vasil'evich Shushkanov Marina Gennad'evna Rastegaeva Artem Eduardovich Rizaev Matvey Igorevich Kondratov Artem Evgen'evich Grishin Nikita Aleksandrovich Pikhtin Timur Anatol'evich Bagaev Maxim Anatol'evich Ladugin Aleksandr Anatol'evich Marmalyuk Vladimir Aleksandrovich Simakov 

作者机构：Ioffe InstitutRussian Academy of SciencesSt.Petersburg 194021Russia Open Joint-Stock Company M.F.Stel’makh Polyus Research InstituteMoscow 117342Russia RUDN UniversityMoscow 117198Russia 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2024年第22卷第7期

页      面：81-85页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

主　　题：hetero-integrated assembly semiconductor lasers thyristor switches LIDAR gain-switching mode laser heterostructure 

摘      要：The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2μm×100μm aperture and a compact heterothyristor switch is *** achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 *** leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W,and the turn-on delay between the elements of the composite aperture was 160 ps.