STUDY OF THE INJURY OF THE Ar^+ INJECTION Si LAYER BY THE USE OF XRD AND ELLIPSOMETER

作     者：G.Q.Wang,F.F.Jiang and X.N.Wang Basic Lessons Department, Shengyang University, Shengyang 110044, China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：1999年第12卷第5期

页      面：1033-1037页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：XRD elliptic polarization injection injury layer 

摘      要：The Ar+ injection layer into silicon can be described as inhomogeneous absorption medium wafer. The distribution of the stress, strain, strain energy in the injury layer has been studied utilizing XRD. And the average ellipsometer is used here to investigate the optical constant and degree of injury of the ion injection injury wafer.