Deposition and Characterization of (Ba, Sr)RuO3 Oxide Electrode Using TMHD-Based Single Cocktail Source

作     者：Hyun Chul Kim Kyung Il Hong Young Bae Kim Duck Kyun Choi 

作者机构：Department of Ceramic EngineeringHanyang University17 Haengdang-dongSeongdong-kuSeoul 133-791Korea Department of Ceramic EngineeringHanyang University17 Haengdang-dongSeongdong-kuSeoul 133-791Korea Department of Ceramic EngineeringHanyang University17 Haengdang-dongSeongdong-kuSeoul 133-791Korea Department of Ceramic EngineeringHanyang University17 Haengdang-dongSeongdong-kuSeoul 133-791Korea 

出 版 物：《Journal of Rare Earths》 (稀土学报（英文版）)

年 卷 期：2004年第22卷第z2期

页      面：8-12页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080503[工学-材料加工工程] 0709[理学-地质学] 0819[工学-矿业工程] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 070205[理学-凝聚态物理] 0708[理学-地球物理学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supped by the Korea Institute of Science and Technology Evaluation and Planning (KISTEP) through the National Research Laboratory (NRL) program in the year of 2002 

主　　题：(Ba, Sr)RuO3 (Ba, Sr)TiO3 MOCVD liquid delivery system(LDS) nozzle type injector 

摘      要：(Ba, Sr)RuO3 has been paid an attention as a promising electrode for (Ba, Sr)TiO3 dielectric material due to its similarity in structure and chemical composition with BST. In this study, (Ba, Sr)RuO3 conductive oxide film was deposited on a 4 inch p-type Si wafer by metal organic chemical vapor deposition (MOCVD) using single cocktail source for the practical device application. Ba(TMHD)2, Sr(TMHD)2, Ru(TMHD)3 precursors and solvent [1-EtylePiPerdine (C7H15 N) ] as starting materials were mixed together for single cocktail source. A liquid delivery system (LDS) and a vaporization cell were utilized for the delivery and vaporization of single cocktail source, respectively. The source feeding rate was controlled by a liquid mass flow controller (LMFC). Deposition parameters, such as the oxygen flow and the source flow rate,were sensitive to phase formation, resistivity and the composition ratio of (Ba, Sr)RuO3 films. Highly (110)-textured (Ba,Sr)RuO3 film was obtained vhen the Ar/O2 ratio was 200/140 sccm at a source flow rate of 0.05 sccm. The process window of stoichiometric composition of BSR film was observed with varying the source flow rate from 0.05 sccm to 0.1 sccm.