Room-temperature nitrogen-rich niobium nitride photodetector for terahertz detection

作     者：LU Xuehui LIU Binding CHI Chengzhu LIU Feng SHI Wangzhou 

作者机构：Department of Physics Mathematics & Science College Shanghai Normal University 

出 版 物：《Optoelectronics Letters》 (光电子快报(英文))

年 卷 期：2024年

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0803[工学-光学工程] 

基　　金：supported by the Innovation Program for Quantum Science and Technology (No. 2021ZD0303401) Program of Shanghai Academic Research Leader under Grant 22XD1422100 Natural Science Foundation of China (Nos. 12141303 12073018 and U1931205) 

摘      要：A sensitive room-temperature metal-semiconductor-metal structure is fabricated on high-resistivity silicon substrates(ρ 4000 Ω·cm)for terahertz detection by utilizing the photoconductive effect. When radiation is absorbed by the nitrogen-rich niobium nitride， the number of free electrons and electrical conductivity increase. The detector without an attached antenna boasts a voltage responsivity of 7，058 V/W at a frequency of 310 GHz as well as small noise density of 3.5 nV/Hz0.5for a noise equivalent power of about 0.5 pW/Hz0.5. The device fabricated by the standard silicon processing technology has large potential in high-sensitivity terahertz remote sensing， communication， and materials detection.