Magnetic and electrical transport study of the intrinsic magnetic topological insulator MnBi_(2)Te_(4)with Ge doping

作     者：Qingwang Bai Mingxiang Xu Qingwang Bai;Mingxiang Xu

作者机构：School of PhysicsSoutheast UniversityNanjing 211189China 

出 版 物：《Frontiers of physics》 (物理学前沿（英文版）)

年 卷 期：2024年第19卷第3期

页      面：51-59页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：the National Key R&D Program of China(Grant No.2018YFA0704300) the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20201285) 

主　　题：MnBi_(2)Te_(4) intrinsic magnetic topological insulator transition points Kondo effect 

摘      要：As an intrinsic magnetic topological insulator with magnetic order and non-trivial topological structure,MnBi_(2)Te_(4)is an ideal material for studying exotic topological states such as quantum anomalous Hall effect and topological axion insulating ***,we carry out magnetic and electrical transport measurements on(Mn1–xGex)Bi_(2)Te_(4)(x=0,0.15,0.30,0.45,0.60,and 0.75)single *** is found that with increasing x,the dilution of magnetic moments gradually weakens the antiferromagnetic exchange ***,Ge doping reduces the critical field of ferromagnetic ordering,which may provide a possible way to implement the quantum anomalous Hall effect at lower magnetic *** transport measurements suggest that electrons are the dominant charge carriers,and the carrier density increases with the Ge doping ***,the Kondo effect is observed in the samples with x=0.45,0.60,and *** results suggest that doping germanium is a viable way to tune the magnetic and electrical transport properties of MnBi_(2)Te_(4),opening up the possibility of future applications in magnetic topological insulators.