Observation of robust anisotropy in WS_(2)/BP heterostructures

作     者：Xinran Li Xing Xie Biao Wu Junying Chen Shaofei Li Jun He Zongwen Liu Jian-Tao Wang Yanping Liu 

作者机构：Institute of Quantum PhysicsSchool of PhysicsCentral South University932 South Lushan RoadChangsha 410083China State Key Laboratory of Precision Manufacturing for Extreme Service PerformanceCentral South University932 South Lushan RoadChangsha 410083China School of Chemical and Biomolecular EngineeringThe University of SydneyNSW 2006Australia The University of Sydney Nano InstituteThe University of SydneyNSW 2006Australia Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing 100049China Songshan Lake Materials LaboratoryDongguan 523808China Shenzhen Research Institute of Central South UniversityShenzhen 518000China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2024年第17卷第7期

页      面：6749-6756页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：the National Natural Science Foundation of China(No.52373311) the High-Performance Complex Manufacturing Key State Lab Project at CSU(No.ZZYJKT2020-12)greatly expedited the research process.Gratitude is extended to the Australian Research Council(ARC Discovery Project,DP180102976)for its substantial contribution to advancing this research agenda.Moreover the National Natural Science Foundation of China(Nos.11974387 and 92263202) the National Key Research and Development Program of China(No.2020YFA0711502) the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB33000000) 

主　　题：two-dimensional materials in-plane anisotropy black phosphorus heterojunctions optoelectronic devices photoluminescence spectra 

摘      要：Two-dimensional(2D)anisotropic materials have garnered significant attention in the realm of anisotropic optoelectronic devices due to their remarkable electrical,optical,thermal,and mechanical *** extensive research has delved into the optical and electrical characteristics of these materials,there remains a need for further exploration to identify novel materials and structures capable of fulfilling device requirements under various ***,we employ heterojunction interface engineering with black phosphorus(BP)to disrupt the C_(3) rotational symmetry of monolayer WS_(2).The resulting WS_(2)/BP heterostructure exhibits pronounced anisotropy in exciton emissions,with a measured anisotropic ratio of 1.84 for neutral *** a comprehensive analysis of magnetic-field-dependent and temperature-evolution photoluminescence spectra,we discern varying trends in the polarization ratio,notably observing a substantial anisotropy ratio of 1.94 at a temperature of 1.6 K and a magnetic field of 9 *** dynamic behavior is attributed to the susceptibility of the WS_(2)/BP heterostructure interface strain to fluctuations in magnetic fields and *** findings provide valuable insights into the design of anisotropic optoelectronic devices capable of adaptation to a range of magnetic fields and temperatures,thereby advancing the frontier of material-driven device engineering.