Analyzing the surface passivity effect of germanium oxynitride:a comprehensive approach through first principles simulation and interface state density

作     者：Sheng-Jie Du Xiu-Xia Li Yang Tian Yuan-Yuan Liu Ke Jia Zhong-Zheng Tang Jian-Ping Cheng Zhi Deng Yu-Lan Li Zheng-Cao Li Sha-Sha Lv Sheng-Jie Du;Xiu-Xia Li;Yang Tian;Yuan-Yuan Liu;Ke Jia;Zhong-Zheng Tang;Jian-Ping Cheng;Zhi Deng;Yu-Lan Li;Zheng-Cao Li;Sha-Sha Lv

作者机构：College of Nuclear Science and Technology Joint Laboratory of Jinping Ultra‑Low Radiation Background Measurement of Ministry of Ecology and Environment Key Laboratory of Beam Technology of Ministry of EducationBeijing Normal UniversityBeijing Normal UniversityBeijing 100875China Joint Research CenterNuctech Company LimitedBeijing 100084China Department of Engineering PhysicsKey Laboratory of Particle&Radiation Imaging of Ministry of EducationTsinghua UniversityBeijing 100084China Key Laboratory of Advanced Materials(MOE)School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2024年第35卷第5期

页      面：74-84页

核心收录：

学科分类：082704[工学-辐射防护及环境保护] 08[工学] 0827[工学-核科学与技术] 

基　　金：supported by the National Natural Science Foundation of China(No.12005017) 

主　　题：Surface passivation High purity germanium detector Germanium nitrogen oxide Interface state density 

摘      要：High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy *** surface passivation of HPGe has become crucial for achieving an extremely low energy *** this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface *** calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface *** on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio *** microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state *** mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.