Synthesis, structure, optical, and electric properties of Ce-doped CuInTe_2 compound

作     者：付丽 郭永权 

作者机构：School of Energy Power and Mechanical Engineering North China Electric Power University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第12期

页      面：469-475页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 070301[理学-无机化学] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.11274110) 

主　　题：CuIn1-xCexTe2 chalcopyrite Raman spectrum band gap semiconductor 

摘      要：Ce-doped Cu In Te2（CICT） semiconducting compounds are successfully synthesized. The phase structures, optical,and electric properties are investigated using powder X-ray diffraction（XRD）, field emission scanning electron microscopy（FESEM）, X-ray photoelectron spectrometer（XPS）, Raman spectrometer, ultraviolet and visible spectrophotometer（UVVis）, and a standard four-probe method. Cu In1-xCex Te2 crystallizes into a tetragonal structure with predominant orientation along the [112] direction. The lattice parameters are a = 6.190（6） A–6.193（0） A and c = 12.406（5） A–12.409（5） A. Ce prefers to occupy the 4b crystal position. According to the analysis of XPS spectra, Ce shows the mixture of valences 4＋and 3＋. Raman spectra reveal that the photon vibrating model in the CICT follows A1 mode in a wavenumber range of123 cm^-1–128 cm^-1. UV-Vis spectra show that the band gap Eg values before and after 0.1 mole Ce doped into Cu In Te2 are 1.28 e V and 1.16 e V, respectively. It might be due to the mixture of valences for Ce. Ce doped into Cu In Te2 still shows the semiconductor characteristics.