Effect of CoSi_2 buffer layer on structure and magnetic properties of Co films grown on Si(001) substrate

作     者：胡泊 何为 叶军 汤进 Syed Sheraz Ahmad 张向群 成昭华 

作者机构：State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of Sciences Department of PhysicsBeihang University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第1期

页      面：484-488页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2011CB921801 and 2012CB933102) the National Natural Science Foundation of China(Grant Nos.11374350,11034004,11274361,and 11274033) the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20131102130005) 

主　　题：magnetic anisotropy Co Si2 buffer layers four-fold symmetry 

摘      要：Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of Co Si2 buffer layers were grown on Si（001） substrates. In order to investigate morphology, structure,and magnetic properties of films, scanning tunneling microscope（STM）, low energy electron diffraction（LEED）, high resolution transmission electron microscopy（HRTEM）, and surface magneto-optical Kerr effect（SMOKE） were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2 buffer layers. Few Co Si2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic（001） films.