X-ray Powder Diffraction Pattern of Bi_4(SiO_4)_3

作     者：Hongchao LIU Changlin KUO (Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China) 

作者机构：Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：1997年第13卷第2期

页      面：145-148页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

主　　题：SiO4 X-ray Powder Diffraction Pattern of Bi4 Bi 

摘      要：In cooperation with figure-of-merits the Rietveld analysis can appraise both angular and intensity data of powder diffraction. In this work, X-ray diffraction pattern of Bi4(SiO4)3 was redetermined with intensity figure-of-merits, which qualify agreement between observed and calculated relative intensities. F30 is 158.90 (0.0059, 32), intensity figure of merit Rint is 8.7, I20(17), 8.0. The values of figure-of-merits show that the data of JCPDS cards are distorted. Both the experimental and calculated peak positions and heights are listed in detail.