In-situ fabrication of on-chip 1T'-MoTe_(2)/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing

作     者：Menglei Zhu Kunxuan Liu Di Wu Yunrui Jiang Xue Li Pei Lin Zhifeng Shi Xinjian Li Ran Ding Yalun Tang Xuechao Yu Longhui Zeng 

作者机构：School of Physics and Microelectronicsand Key Laboratory of Material PhysicsZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer EngineeringUniversity of California San DiegoLa JollaCA 92093USA State Key Laboratory of Integrated OptoelectronicsCollege of Electronic Science and EngineeringJilin UniversityChangchun 130012China Key Laboratory of Multifunctional Nanomaterials and Smart SystemsSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2024年第17卷第6期

页      面：5587-5594页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 

基　　金：the National Natural Science Foundation of China(Nos.U22A20138,62374149,and 62375279) the Collaborative Innovation Center of Suzhou Nano Science&Technology.The authors are grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO) 

主　　题：MoTe_(2) broadband photodetection Schottky junction imaging position sensitive detector 

摘      要：High-sensitivity room-temperature multi-dimensional infrared(IR)detection is crucial for military and civilian ***,the gapless electronic structures and unique optoelectrical properties have made the two-dimensional(2D)topological semimetals promising candidates for the realization of multifunctional optoelectronic ***,we demonstrated the in-situ construction of high-performance 1T’-MoTe_(2)/Ge Schottky junction device by inserting an ultrathin AlOx passivation *** good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron,an ultrafast response time of~160 ns,and a large specific detectivity of over 109 Jones in mid-infrared(MIR)range surpasses that of most 2D materials-based IR sensors,approaching the performance of commercial IR *** on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room *** these outstanding detection features have enabled the demonstration of position-sensitive detection *** demonstrates an exceptional position sensitivity of 14.9 mV/mm,an outstanding nonlinearity of 6.44%,and commendable trajectory tracking and optoelectronic demodulation *** study not only offers a promising route towards room-temperature MIR optoelectronic applications,but also demonstrates a great potential for application in optical sensing systems.