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Brightness enhancement on random-distributed-feedback Raman fiber lasers pumped by multimode diodes

作     者:Xiulu Hao Chenchen Fan Yang Li Zhiyong Pan Jinyong Leng Tianfu Yao Bing Lei Pu Zhou Xiulu Hao;Chenchen Fan;Yang Li;Zhiyong Pan;Jinyong Leng;Tianfu Yao;Bing Lei;Pu Zhou

作者机构:College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangshaChina Nanhu Laser LaboratoryNational University of Defense TechnologyChangshaChina 

出 版 物:《High Power Laser Science and Engineering》 (高功率激光科学与工程(英文版))

年 卷 期:2024年第12卷第3期

页      面:69-76页

核心收录:

学科分类:12[管理学] 080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基  金:supported by the National Natural Science Foundation of China(Nos.62061136013 and 12174445) 

主  题:fiber laser purely passive gain random distributed feedback stimulated Raman scattering 

摘      要:The power scaling on short wavelength(SW)fiber lasers operating around 1μm are in significant demand for applications in energy,environment and *** challenge for performance scalability of high-power SW lasers based on rare-earth-doped fiber primarily lies in the physical limitations,including reabsorption,amplified spontaneous emission and parasitic laser ***,we demonstrate an all-fiberized,purely passive SW(1018 nm)randomdistributed-feedback Raman fiber laser(RRFL)to validate the capability of achieving high-power output at SWs based on multimode laser diodes(LDs)direct *** pumped by multimode LDs,the high-brightness RRFL delivers over 656 W,with an electro-optical efficiency of 20%relative to the *** slope efficiency is 94%.The beam quality M2factor is 2.9(which is~20 times that of the pump)at the maximum output signal power,achieving the highest brightness enhancement of 14.9 in *** the best of our knowledge,this achievement also represents the highest power record of RRFLs utilizing multimode diodes for direct *** work may not only provide a new insight into the realization of high-power,high-brightness RRFLs but also is a promising contender in the power scaling of SWs below 1μm.

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