Effect of Free Radicals on Irradiation Chemistry of a Double-Coordination Organotin(Sn_(4))Photoresist by Adjusting Alkyl Ligands

作     者：Hao Chen Yifeng Peng Haichao Fu Fuping Han Guangyue Shi Feng Luo Jun Zhao Danhong Zhou Pengzhong Chen Xiaojun Peng 

作者机构：State Key Laboratory of Fine ChemicalsFrontiers Science Center for Smart MaterialsSchool of Chemical EngineeringDalian University of TechnologyDalian 116024 Research and Development Center of Valiant Co.Ltd.YEDAYantai 264006 School of Materials Science and EngineeringNankai UniversityTianjin 300350 Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201203 State Key Laboratory of Fine ChemicalsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen 518060 

出 版 物：《CCS Chemistry》 (中国化学会会刊（英文）)

年 卷 期：2024年第6卷第8期

页      面：2044-2053页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070303[理学-有机化学] 0703[理学-化学] 

基　　金：supported by the National Natural Science Foundation of China(grant nos.22090011 and 22378052) the Fundamental Research Funds for China Central Universities(grant nos.DUT22LAB608 and DUT20RC(3)030) Key R&D Program of Shandong Province(grant no.2021CXGC010308) 

主　　题：extreme ultraviolet photoresist tin-oxo clusters free radical alkyl ligand lithographic process semiconductor manufacturing 

摘      要：Metal oxide cluster(MOC)photoresists are highly promising materials for the next generation of extreme ultraviolet lithography(EUVL).The consecutive exploration of novel MOC materials and their structural irradiation chemistry are the major concerns associated with ***,we report two bicoordinated tin-oxo clusters(TOCs),the organic ligands of which contain both adamantane carboxylic acids and alkyl groups(methyl:Sn_(4)–Me–C10;butyl:Sn_(4)–Bu–C10).We explore the correlation between the structures of the TOCs and their patterning properties by adjusting the alkyl groups coordinated to the Sn *** structural variation causes different irradiation chemistry,with Sn_(4)–Me–C10 exhibiting improved resolution and Sn_(4)–Bu–C10 demonstrating higher *** differences are attributed to the bonding energies of the Sn-methyl and Sn-butyl groups,the size of the resulting alkyl radicals,and their reaction *** clusters occur in the reactions of Sn–C bond cleavage and the decarboxylation of adamantane carboxylic acids upon ***,the entire process exhibits distinct *** on the electron-beam lithography and other experiments,we proposed irradiationinduced reaction mechanisms for both *** Sn_(4)–Bu–C10 cluster predominantly undergoes alkane chain linkage,whereas the Sn_(4)–Me–C10 cluster mainly follows the adamantanes linkage pathway.