Comparison of electronic structure between monolayer silicenes on Ag(111)

作     者：Chun-Liang Lin Ryuichi Arafune Maki Kawai Noriaki Takagi 

作者机构：Department of Advanced Materials Science Graduate School of Frontier ScienceThe University of Tokyo International Center for Materials Nanoarchitectonics (WPI-MANA)National Institute for Materials Science 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第8期

页      面：120-124页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0704[理学-天文学] 070301[理学-无机化学] 

基　　金：supported by the Ministry of Education,Culture,Sports,Science and Technology(MEXT) through Grants-in-Aid for Scientific Research(Grant Nos.24241040 and 25110008) the World Premier International Research Center Initiative(WPI),MEXT,Japan 

主　　题：silicene electronic structure STM DFT 

摘      要：√√The electronic structures of monolayer silicenes(4 × 4 and■ ×■R13.9o) grown on Ag(111) surface are studied by scanning tunneling spectroscopy(STS) and density functional theory(DFT) calculations. While both phases have similar electronic structures around the Fermi level, significant differences are observed in the higher energy unoccupied *** DFT calculations show that the contributions of Si 3pz orbitals to the unoccupied states are different because of their different buckled configurations.