巧妙的稀掺杂策略实现高性能GeTe热电材料

作     者：钟锦璇 杨晓玉 吕途 梁格格 张胜楠 张朝华 敖伟琴 刘福生 南鹏飞 葛炳辉 胡利鹏 Jinxuan Zhong;Xiaoyu Yang;Tu Lyu;Gege Liang;Shengnan Zhang;Chaohua Zhang;Weiqin Ao;Fusheng Liu;Pengfei Nan;Binghui Ge;Lipeng Hu

作者机构：College of Materials Science and EngineeringShenzhen Key Laboratory of Special Functional MaterialsGuangdong Research Center for Interfacial Engineering of Functional MaterialsGuangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and UtilizationInstitute of Deep Earth Sciences and Green EnergyShenzhen UniversityShenzhen 518060China Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceKey Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China Superconducting Materials Research CenterNorthwest Institute for Nonferrous Metal ResearchXi’an 710016China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2024年第69卷第8期

页      面：1037-1049页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Key R&D Program of China(2021YFB1507403) the National Natural Science Foundation of China(52071218,and 11874394) the Shenzhen University 2035 Program for Excellent Research(00000218) The University Synergy Innovation Program of Anhui Province(GXXT-2020-003) 

主　　题：Thermoelectric GeTe Dilute doping Interstitial atoms Lattice softening 

摘      要：In thermoelectrics,doping is essential to augment the figure of *** strategy,predomina ntly heavy doping,aims to optimize carrier concentration and restrain lattice thermal ***,this tactic can severely hamper carrier transport due to pronounced point defect scattering,particularly in materials with inherently low carrier ***,dilute doping,although minimally affecting carrier mobility,frequently fails to optimize other vital thermoelectric ***,we present a more nuanced dilute doping strategy in GeTe,leveraging the multifaceted roles of small-size metal atoms.A mere 4%CuPbSbTe_(3)introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu ***,the formation of multiscale microstructures,including zero-dimensional Cu interstitials,one-dimensional dislocations,two-dimensional planar defects,and three-dimensional nanoscale amorphous GeO_(2)and Cu_(2)GeTe_(3)precipitates,along with the ensuing lattice softening,contributes to an ultralow lattice thermal ***,dilute CuPbSbTe_(3)doping incurs only a marginal decrease in carrier *** trace Cd doping,employed to alleviate the bipolar effect and align the valence bands,yields an impressive figure-of-merit of 2.03 at 623 K in(Ge_(0.97)Cd_(0.03)Te)_(0.96)(CuPbSbTe_(3))_(0.04).This leads to a high energyconversion efficiency of 7.9%and a significant power density of 3.44 W cm^(-2)at a temperature difference of 500 *** results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.