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Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

磁控溅射制备的微晶钴薄膜的组织结构及磁性能

作     者:Kerui Song Zhou Li Mei Fang Zhu Xiao Qian Lei Kerui Song;Zhou Li;Mei Fang;Zhu Xiao;Qian Lei

作者机构:School of Materials Science and EngineeringCentral South UniversityChangsha 410083China State Key Laboratory of Powder MetallurgyCentral South UniversityChangsha 410083China Hunan Key Laboratory of Super-Microstructure and Ultrafast ProcessSchool of Physics and electronicsCentral South UniversityChangsha 410083China Key Laboratory of Non-Ferrous Metal Materials Science and EngineeringMinistry of EducationChangsha 410083China 

出 版 物:《International Journal of Minerals,Metallurgy and Materials》 (矿物冶金与材料学报(英文版))

年 卷 期:2024年第31卷第2期

页      面:384-394页

核心收录:

学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 

基  金:the financial support from the National Key Research and Development Program of China(No.2017YFB0305500) the State Key Laboratory of Powder Metallurgy,Central South University,Changsha,China 

主  题:cobalt thin film magnetron sputtering microstructure electromagnetic properties 

摘      要:Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were *** the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore ***,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy *** the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect ***-pondingly,a quantitative model for the coercivity of Co thin films was *** polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

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