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Active pixel image sensor array for dual vision using large-area bilayer WS_(2)

作     者:Arindam Bala Mayuri Sritharan Na Liu Muhammad Naqi Anamika Sen Gyuchull Han Hyun Yeol Rho Youngki Yoon Sunkook Kim 

作者机构:School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwonRepublic of Korea Waterloo Institute for Nanotechnology(WIN)University of WaterlooWaterlooOntarioCanada Department of Electrical and Computer EngineeringUniversity of WaterlooWaterlooOntarioCanada 

出 版 物:《InfoMat》 (信息材料(英文))

年 卷 期:2024年第6卷第4期

页      面:68-82页

核心收录:

学科分类:080202[工学-机械电子工程] 08[工学] 080203[工学-机械设计及理论] 0802[工学-机械工程] 

基  金:supported in part by the National Research Foundation of Korea(2022M3D1A2083618,2021M3H4A1A02056037,2022H1D3A2A01096362,RS-2023-00237585,RS-2023-00237308) supported in part by Ontario's Ministry of Research,Innovation,and Science through Early Researcher Awards(ER17-13-205) also in part by NSERC Discovery Grant(RGPIN-2020-04070) M.S.is supported in part by the NSERC Canada Graduate Scholarship-Master's(CGS-M)program and the WIN Nanofellowship 

主  题:dual vision image sensors infrared wavelength detection phototransistors thin-film transistor arrays transition metal dichalcogenides 

摘      要:Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security *** traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum *** this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was *** bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor *** WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical *** optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating ***,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were *** proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.

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