Low-thermal-budget synthesis of monolayer MoS_(2)

作     者：Zongmeng Yang Shibo Fang Jing Lu Zongmeng Yang;Shibo Fang;Jing Lu

作者机构：State Key Laboratory for Mesoscopic Physics and School of PhysicsPeking UniversityBeijing 100871China Collaborative Innovation Center of Quantum MatterBeijing 100871China Beijing Key Laboratory for Magnetoelectric Materials and Devices(BKL-MEMD)Peking UniversityBeijing 100871China Peking University Yangtze Delta Institute of OptoelectronicsNantong 226010China Key Laboratory for the Physics and Chemistry of NanodevicesPeking UniversityBeijing 100871China Beijing Key Laboratory of Quantum DevicesPeking UniversityBeijing 100871China 

出 版 物：《Science China Materials》 (中国科学（材料科学）（英文版）)

年 卷 期：2024年第67卷第1期

页      面：372-374页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

主　　题：synthesis thermal MoS_(2) 

摘      要：Two-dimensional(2D)materials,such as MoS_(2),have been considered as a competitive coordinate for future electronics due to their excellent electrostatics and high mobility[1-3].Moreover,the potential integration of 2D materials with silicon circuits can present increased density and multifunction in future heterogeneously integrated circuits[4,5].However,the high thermal-budget during MoS_(2) synthesis exceeds the temperature requirement of direct integration with Si in the back-end-of-line(BEOL)fabrication process[6-8].