Chemical vapor deposition synthesis of V-doped MoS2
作者机构：School of PhysicsBeijing Institute of Technology School of Information and Electronics and Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of Technology School of PhysicsShaanxi Normal University The Institute of Scientific and Industrial ResearchOsaka University Advanced Research Institute of Multidisciplinary Science Beijing Institute of Technology
出 版 物：《Rare Metals》 (稀有金属(英文版))
年 卷 期：2023年第42卷第12期
页 面：3985-3992页
核心收录：
学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 0805[工学-材料科学与工程（可授工学、理学学位）]
基 金：financially supported by the National Natural Science Foundation of China (Nos.62174013 and92265111) the Funding Program of Beijing Institute of Technology (Nos.3180012212214 and 3180023012204)
主 题：Chemical vapor deposition Synthesis First-principles calculations 2H 3R
摘 要：Van der Waals coupling with different stacking configurations can significantly affect the optical and electronic properties of ultrathin two-dimensional(2D)materials,which is an effective way to tune device performance.Herein,we report a salt-assisted chemical vapor deposition method for the synthesis of bilayer V-doped MoS2with 2H and 3R phases,which are demonstrated by the second harmonic generation and scanning transmission electron microscopy.Notably,the mobility of the 3R phase V-doped MoS2is 6.2% higher than that of the 2H phase.Through first-principles calculations,we further reveal that this particular behavior is attributed to the stronger interlayer coupling of 3R compared to the 2H stacking configuration.This research can be further generalized to other transition metal chalcogenides and will contribute to the development of electronic devices based on 2D materials in the future.
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